Growth and Properties of (001)-oriented Pb(Zr0.52Ti0.48)O3/LaNiO3 Films on Si(001) Substrates with TiN Buffer Layers
نویسندگان
چکیده
Pulsed laser deposition has been used to grow Pb(Zr0.52Ti0.48)O3 (PZT)/LaNiO3 (LNO) heterostructures with restricted crystallographic orientations on bare Si(001) and SiO2-coated Si(001) substrates, using TiN buffer layers. The effect of background gas pressure on orientation of the thin films was investigated in detail. XRD analyses showed that under optimized conditions, (001)-oriented PZT/LNO/TiN heterostructures could be grown on either Si(001) or SiO2/Si substrates. The (001)-textured PZT films had remnant polarizations as high as 23μC/cm, and also had a low coercive field. Up to 10 switching cycles have been achieved in these PZT films.
منابع مشابه
Controlling Piezoelectric Responses in Pb(Zr0.52Ti0.48)O3 Films through Deposition Conditions and Nanosheet Buffer Layers on Glass
Nanosheet Ca2Nb3O10 (CNOns) layers were deposited on ultralow expansion glass substrates by the Langmuir-Blodgett method to obtain preferential (001)-oriented growth of Pb(Zr0.52Ti0.48)O3 (PZT) thin films using pulsed laser deposition (PLD) to enhance the ferroelectric and piezoelectric properties of the films. The PLD deposition temperature and repetition frequency used for the deposition of t...
متن کاملA Study of ZnO Buffer Layer Effect on Physical Properties of ITO Thin Films Deposited on Different Substrates
The improvement of the physical properties of Indium Tin Oxide (ITO) layers is quite advantageous in photovoltaic applications. In this study the ITO film is deposited by RF sputtering onto p-type crystalline silicon (c-Si) with (100) orientation, multicrystalline silicon (mc-Si), and glass substrates coated with ZnO and annealed in vacuum furnace at 400°C. Electrical, optical, structural a...
متن کاملPolarization fatigue and photoinduced current in (Pb0.72La0.28)Ti0.93O3 buffered Pb(Zr0.52Ti0.48)O3 films on platinized silicon
We report a study on the fatigue behavior of Pb(Zr0.52Ti0.48)TiO3 (PZT) films deposited on Pt/Ti/SiO2/Si substrates by a sol–gel method with singleand double-sided (Pb0.72La0.28)Ti0.93O3 (PLT) buffer layers, with an attempt to clarify the role of the top and bottom PLT buffer layers on the fatigue endurance (FE) of the PZT films. It is revealed that the existence of the PLT buffer layer and the...
متن کاملSi incorporation in Ti1-xSixN films grown on TiN(001) and (001)-faceted TiN(111) columns
Thin films consisting of TiN nanocrystallites encapsulated in a fully percolated SiNy tissue phase are archetypes for hard and superhard nanocomposites. Here, we investigate metastable SiNy solid solubility in TiN and probe the effects of surface segregation during growth of TiSiN films onto substrates that are either flat TiN(001)/MgO(001) epitaxial buffer layers or TiN(001) facets of length 1...
متن کاملEnhanced Physical Properties Of Indium Tin Oxide Films Grown on Zinc Oxide-Coated Substrates
Structural, electrical and optical properties of indium tin oxide or ITO (In2O3:SnO2) thin films on different substrates are investigated. A 100-nm-thick pre-deposited zinc oxide (ZnO) buffer layer is utilized to simultaneously improve the electrical and optical properties of ITO films. High purity ZnO and ITO layers are deposited with a radio frequency sputtering in argon ambient with plasma p...
متن کامل